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savantic semiconductor product specification silicon npn power transistors 2SD882 d escription with to-126 package complement to type 2sb772 applications audio amplifier voltage regulator dc-dc converter relay driver pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 40 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-peak 7 a t a =25 1 p d total power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD882 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 30 v v cesat collector-emitter saturation voltage i c =2.0a; i b =0.2a 0.5 v v besat base-emitter saturation voltage i c =2.0a ;i b =0.2a 2.0 v i cbo collector cut-off current v cb =30v; i e =0 1 a i ebo emitter cut-off current v eb =3v; i c =0 1 a h fe-1 dc current gain i c =20ma ; v ce =2v 30 h fe-2 dc current gain i c =1a ; v ce =2v 60 400 f t transition frequency i c =0.1a ; v ce =5v 90 mhz c ob collector output capacitance f=1mhz ; v cb =10v 45 pf h fe-2 classifications r q p e 60-120 100-200 160-320 200-400
savantic semiconductor product specification 3 silicon npn power transistors 2SD882 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SD882

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